Datasheet4U Logo Datasheet4U.com

PSMN2R2-40YSD - N-channel MOSFET

General Description

Standard level gate drive N-channel enhancement mode MOSFET.

2.

Table 1.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN2R2-40YSD 40 V standard level MOSFET 8 July 2019 Preliminary data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET. 2. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 [1] VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 9 ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 11; Fig. 12 Min Typ Max Unit - - 40 V - - 120 A - - 166 W -55 - 175 °C - 1.9 2.2 mΩ - 6.