PSMN2R0-100SSF
description
Next Power 100 V, standard level gate drive MOSFET. Qualified to 175 °C and remended for industrial and consumer applications.
2. Features and benefits
- Low Qrr for higher efficiency and lower spiking
- 267 Amps ID(max) continuous current rating
- Low QG × RDSon FOM for high efficiency switching applications
- Strong avalanche energy rating (Eas)
- Avalanche rated and 100% tested
- Ha-free and Ro HS pliant LFPAK88 package
3. Applications
- Synchronous rectifier in AC-DC and DC-DC
- Primary side switch
- BLDC motor control
- Full-bridge and half-bridge applications
- Battery protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot) total gate charge
Avalanche ruggedness
EDS(AL)S non-repetitive drainsource avalanche...
