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PSMN1R9-40PL - N-channel MOSFET

General Description

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology.

Product design and manufacture has been optimized for use in battery operated power tools.

2.

Key Features

  • High efficiency due to low switching & conduction losses.
  • Robust construction for demanding.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN1R9-40PL N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for demanding applications • Logic level gate 3. Applications • Battery-powered tools • Load switching • Motor control • Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig.