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PSMN1R7-40YLD - N-channel MOSFET

General Description

200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Key Features

  • 200 A continuous ID(max) rating.
  • Avalanche rated, 100% tested at IAS = 180 A.
  • Strong SOA (linear-mode) rating.
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.

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Full PDF Text Transcription (Reference)

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PSMN1R7-40YLD N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2.