PSMN1R6-30MLH datasheet, mosfet equivalent, nexperia

Features and benefits

* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* 160 A rated <.

Application

2. Features and benefits
* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing.

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. 2. Features and .

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