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PSMN1R0-40ULD - N-channel MOSFET

General Description

SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

Key Features

  • Improved creepage and clearance.
  • meets the requirements of UL2595.
  • 280 A capability.
  • Avalanche rated, 100% tested at IAS = 190 A.
  • NextPower-S3 technology delivers 'superfast switching with soft recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjuncti.

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Full PDF Text Transcription (Reference)

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PSMN1R0-40ULD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2.