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PSMN1R0-25YLD Datasheet Preview

PSMN1R0-25YLD Datasheet

N-channel MOSFET

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PSMN1R0-25YLD
N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
19 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETS with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
100% Avalanche tested at I(AS) = 100 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
4. Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Min Typ Max Unit
- - 25 V
[1] - - 100 A




nexperia

PSMN1R0-25YLD Datasheet Preview

PSMN1R0-25YLD Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN1R0-25YLD
N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 10 V
QGD
gate-drain charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
Source-drain diode
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Fig. 16
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 160 W
-55 -
175 °C
-
0.89 1
- 1.19 1.43 mΩ
- 71.8 - nC
- 33.2 - nC
- 39.7 - nC
- 8 - nC
- 0.9 -
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R0-25YLD
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
PSMN1R0-25YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 April 2016
Version
SOT669
© Nexperia B.V. 2017. All rights reserved
2 / 14


Part Number PSMN1R0-25YLD
Description N-channel MOSFET
Maker nexperia
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