- Part: PSMN1R0-25YLD
- Description: N-channel MOSFET
- Manufacturer: Nexperia
- Size: 723.90 KB
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PSMN1R0-25YLD Key Features
- 100% Avalanche tested at I(AS) = 100 A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach Power SO8 package; no glue, no
- Wave solderable; exposed leads for optimal visual solder inspection
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