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PSMN0R9-30YLD Datasheet Preview

PSMN0R9-30YLD Datasheet

N-channel MOSFET

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PSMN0R9-30YLD
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
14 December 2015
Product data sheet
1. General description
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56
package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology
delivers high efficiency, low spiking performance usually associated with MOSFETs
with an integrated Schottky or Schottky-like diode but without problematic high leakage
current. NextPowerS3 is particularly suited to high efficiency applications at high
switching frequencies.
2. Features and benefits
300 Amp capability
Avalanche rated, 100 % tested at I(as) = 190 Amps
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 150 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
4. Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
drain-source voltage
Conditions
25 °C ≤ Tj ≤ 150 °C
Min Typ Max Unit
- - 30 V




nexperia

PSMN0R9-30YLD Datasheet Preview

PSMN0R9-30YLD Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN0R9-30YLD
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 12; Fig. 13
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 15 V;
Fig. 12; Fig. 13
Source-drain diode
S
softness factor
IS = 25 A; VGS = 0 V; dIS/dt = -100 A/µs;
VDS = 15 V; Fig. 16
Min Typ Max Unit
- - 300 A
- - 291 W
-55 -
150 °C
- 0.79 1.09 mΩ
- 0.65 0.87 mΩ
- 13.5 - nC
- 109 - nC
- 0.9 -
[1] 300A Continuous current has been successfully demonstrated during application tests. Practically the
current will be limited by PCB, Thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT1023)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN0R9-30YLD
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package
(LFPAK56); 4 leads
PSMN0R9-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2015
Version
SOT1023
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number PSMN0R9-30YLD
Description N-channel MOSFET
Maker nexperia
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