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PSMN0R9-30ULD Datasheet Preview

PSMN0R9-30ULD Datasheet

N-channel MOSFET

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PSMN0R9-30ULD
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET
in SOT1023A enhanced package for UL2595, using
NextPowerS3 Schottky-Plus Technology
23 May 2018
Product data sheet
1. General description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic
level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3
portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking
performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode
but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency
applications at high switching frequencies.
2. Features and benefits
Improved creepage and clearance – meets the requirements of UL2595
300 A capability
Avalanche rated, 100% tested at IAS = 190 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 150 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
Brushed and brushless motor control
Battery powered appliances where enhanced creepage and clearance is required to meet
UL2595
For non-UL2595 applications please use PSMN0R9-30YLD
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Conditions
25 °C ≤ Tj ≤ 150 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
[1] - - 300 A
- - 227 W
-55 -
150 °C




nexperia

PSMN0R9-30ULD Datasheet Preview

PSMN0R9-30ULD Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN0R9-30ULD
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPowerS3 Schottky-Plus Technology
Symbol
Parameter
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Source-drain diode
S softness factor
Conditions
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 25 A; VDS = 15 V; VGS = 10 V;
Fig. 12; Fig. 13
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V; Fig. 16
Min Typ Max Unit
- 0.79 1.09 mΩ
- 0.65 0.87 mΩ
- 13.5 - nC
- 109 - nC
- 0.9 -
[1] 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
sot1023a_sv
LFPAK56-UL2595
(SOT1023A)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN0R9-30ULD
LFPAK56-UL
2595
Description
plastic, single-ended surface-mounted package (LFPAK56); 4
leads; 1.27 mm pitch
Version
SOT1023A
PSMN0R9-30ULD
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 May 2018
© Nexperia B.V. 2018. All rights reserved
2 / 13


Part Number PSMN0R9-30ULD
Description N-channel MOSFET
Maker nexperia
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