PSMN0R9-30ULD
PSMN0R9-30ULD is N-channel MOSFET manufactured by Nexperia.
description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Next Power S3 portfolio utilising Nexperia’s unique “Schottky Plus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. Next Power S3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
- Improved creepage and clearance
- meets the requirements of UL2595
- 300 A capability
- Avalanche rated, 100% tested at IAS = 190 A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery; s-factor > 1
- Low spiking and ringing for low EMI designs
- Unique “Schottky Plus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150 °C
- Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
- Brushed and brushless motor control
- Battery powered appliances where enhanced creepage and clearance is required to meet
UL2595
- For non-UL2595 applications please use PSMN0R9-30YLD
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
[1]
- - 300 A
- - 227 W
-55
- 150 °C
Nexperia
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using Next Power S3 Schottky-Plus Technology
Symbol
Parameter...
