- Part: PSMN0R9-30ULD
- Description: N-channel MOSFET
- Manufacturer: Nexperia
- Size: 263.29 KB
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PSMN0R9-30ULD Key Features
- Improved creepage and clearance
- meets the requirements of UL2595
- 300 A capability
- Avalanche rated, 100% tested at IAS = 190 A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance
Other PSMN0R9-30ULD Datasheets
| Manufacturer |
Part Number |
Description |
NXP Semiconductors |
PSMN0R9-30YLD
|
N-channel MOSFET |