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PSMN0R9-25YLD Datasheet Preview

PSMN0R9-25YLD Datasheet

N-channel MOSFET

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PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
27 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETS with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
100% Avalanche tested at I(AS) = 190 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
4. Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Min Typ Max Unit
- - 25 V
[1] - - 300 A




nexperia

PSMN0R9-25YLD Datasheet Preview

PSMN0R9-25YLD Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 0 V
QGD
gate-drain charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
Source-drain diode
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Fig. 16
Min Typ Max Unit
- - 238 W
-55 -
175 °C
- 0.96 1.2 mΩ
- 0.72 0.85 mΩ
- 89.8 - nC
- 41.5 - nC
- 47.2 - nC
- 9.9 - nC
- 0.8 -
[1] 300A continuous current has been successfully demonstrated during application tests. Practically the
current will be limited by PCB thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN0R9-25YLD
LFPAK56;
Power-SO8
PSMN0R9-25YLD
Product data sheet
Description
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
All information provided in this document is subject to legal disclaimers.
27 April 2016
Version
SOT669
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number PSMN0R9-25YLD
Description N-channel MOSFET
Maker nexperia
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