PSMN0R9-25YLD datasheet, mosfet equivalent, nexperia

Features and benefits

* 100% Avalanche tested at I(AS) = 190 A
* Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
* Superfast switc.

Application

at high switching frequencies. 2. Features and benefits
* 100% Avalanche tested at I(AS) = 190 A
* Ultra low QG.

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integra.

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