PSMN0R9-25YLC Datasheet | Nexperia

description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads - Ultra low Rdson and low parasitic inductance 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Power OR-ing - Server power supplies - Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Min Typ Max Unit - - 25 V [1] - - 100 A - - 272 W -55 - 175 °C - 0.95 1.25 mΩ - 0.75 0.99 mΩ Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using Next Power technology Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 14; see Figure 15 QG(tot) total gate...