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PSMN0R7-25YLD Datasheet Preview

PSMN0R7-25YLD Datasheet

N-channel MOSFET

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PSMN0R7-25YLD
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
25 July 2017
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers high efficiency,
low spiking performance usually associated with MOSFETS with an integrated Schottky or
Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly
suited to high efficiency applications at high switching frequencies.
2. Features and benefits
100% Avalanche tested at I(AS) = 190 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique "SchottkyPlus" technology; Schottky-like performance with < 1 μA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 150 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C ≤ Tj ≤ 150 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
Min Typ Max Unit
- - 25 V
[1] - - 300 A
- - 158 W
- 0.76 0.92 mΩ




nexperia

PSMN0R7-25YLD Datasheet Preview

PSMN0R7-25YLD Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN0R7-25YLD
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
Symbol
Parameter
Dynamic characteristics
QGD gate-drain charge
Conditions
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
Min Typ Max Unit
- 11.9 - nC
[1] 300A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB
thermal design and operating temperature
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G Gate
mb D
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT1023)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN0R7-25YLD
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56); 4
leads
Version
SOT1023
7. Marking
Table 4. Marking codes
Type number
PSMN0R7-25YLD
Marking code
0D725L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
VGS gate-source voltage
Min Max Unit
- 25 V
- 25 V
-20 20
V
PSMN0R7-25YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2017
© Nexperia B.V. 2017. All rights reserved
2 / 14


Part Number PSMN0R7-25YLD
Description N-channel MOSFET
Maker nexperia
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