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PSMN0R7-25YLD - N-channel MOSFET

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Features

  • 100% Avalanche tested at I(AS) = 190 A.
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
  • Superfast switching with soft-recovery.
  • Low spiking and ringing for low EMI designs.
  • Unique "SchottkyPlus" technology; Schottky-like performance with < 1 μA leakage at 25 °C.
  • Optimised for 4.5 V gate drive.
  • Low parasitic inductance and resistance.
  • High reliability clip bonded and solder.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 25 July 2017 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.
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