PSMN0R7-25YLD Datasheet PDF - nexperia N-channel MOSFET Specs

PSMN0R7-25YLD - N-channel MOSFET

Datasheet Summary

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Features

100% Avalanche tested at I(AS) = 190 A.
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery.
Low spiking and ringing for low EMI designs.
Unique "SchottkyPlus" technology; Schottky-like performance with < 1 μA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resistance.
High reliability clip bonded and solder.

Datasheet Details

Part number	PSMN0R7-25YLD
Manufacturer	nexperia
File Size	266.63 KB
Description	N-channel MOSFET
Datasheet	PSMN0R7-25YLD Datasheet
Additional preview pages of the PSMN0R7-25YLD datasheet.

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Full PDF Text Transcription

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PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 25 July 2017 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.

Published: Jul 5, 2019 |