PSMN075-100MSE Datasheet | Nexperia

description New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (Po E) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pantilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of “soft-start” procedures, resilience to shortcircuits, thermal management and power density. Part of Nexperia’s “Next Power Live” MOSFET portfolio, the PSMN075-100MSE has been designed specifically to pliment the latest Po E controllers, offering both superior linear mode operation and very low RDS(on) in a cost-effective, industry patible, LFPAK33 package. 2. Features and benefits - Enhanced forward biased safe operating area for superior linear mode operation - Low Rdson for low conduction losses - Ultra reliable LFPAK33 package - no glue, no wires, 175°C - Very low IDSS 3. Applications - IEEE802.3at and proprietary solutions - (type 2) - Suitable for Po E applications upto 30W - Use PSMN040-100MSE for higher power requirements 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 resistance Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 5 A; VDS = 50 V; Tj 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 100 V - - 18 A - - 65 W - 57 71 mΩ - 5.3 - n C Nexperia N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for Po E applications Symbol QG(tot) Parameter total gate charge Avalanche...