PSMN041-80YL
description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, munications and domestic equipment.
2. Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive
- LFPAK56 package is footprint patible with other Power-SO8 types
- Qualified to 175 °C
3. Applications
- DC-to-DC converters
- Load switch
- TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C; Fig. 13; Fig. 12
Dynamic characteristics
QGD QG(tot) gate-drain charge total gate charge
VGS =...
