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PSMN041-80YL Datasheet Preview

PSMN041-80YL Datasheet

N-channel MOSFET

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PSMN041-80YL
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in
LFPAK56 package. This product has been designed and qualified for use in a wide range
of industrial, communications and domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive
LFPAK56 package is footprint compatible with other Power-SO8 types
Qualified to 175 °C
3. Applications
DC-to-DC converters
Load switch
TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C;
Fig. 13; Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 5 A; VDS = 64 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 80 V
- - 25 A
- - 64 W
-
32.8 41
- - 103 mΩ
- 4.3 - nC
- 21.9 - nC




nexperia

PSMN041-80YL Datasheet Preview

PSMN041-80YL Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN041-80YL
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 25 A;
Vsup ≤ 80 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Typ Max Unit
- - 23.9 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN041-80YL
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN041-80YL
Marking code
04180
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID
PSMN041-80YL
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1
All information provided in this document is subject to legal disclaimers.
Product data sheet
1 May 2013
Min Max Unit
- 80 V
- 80 V
-20 20
V
- 18 A
© Nexperia B.V. 2017. All rights reserved
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Part Number PSMN041-80YL
Description N-channel MOSFET
Maker nexperia
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