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PSMN020-100YS Datasheet Preview

PSMN020-100YS Datasheet

N-channel MOSFET

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PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
26 March 2014
Product data sheet
1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
3. Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C;
resistance
Fig. 13
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 14
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A; VDS = 50 V;
Fig. 15; Fig. 16
Min Typ Max Unit
- - 100 V
- - 43 A
- - 106 W
-55 -
175 °C
- - 37 mΩ
- 15 20.5 mΩ
- 11.8 16.5 nC
- 41 57.4 nC




nexperia

PSMN020-100YS Datasheet Preview

PSMN020-100YS Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 43 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
Fig. 4
Min Typ Max Unit
- - 103 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN020-100YS
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN020-100YS
Marking code
20100
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
VGS gate-source voltage
Ptot
PSMN020-100YS
total power dissipation
Tmb = 25 °C; Fig. 1
All information provided in this document is subject to legal disclaimers.
Product data sheet
26 March 2014
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 106 W
© Nexperia B.V. 2017. All rights reserved
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Part Number PSMN020-100YS
Description N-channel MOSFET
Maker nexperia
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