PSMN018-100PSF datasheet, mosfet equivalent, nexperia

Features and benefits

* Optimised for fast switching, low spiking, high efficiency
* Low QG x RDSon FOM for high efficiency switching applications
* Low body diode losses (Qrr) and.

Application

2. Features and benefits
* Optimised for fast switching, low spiking, high efficiency
* Low QG x RDSon FOM for.

Description

NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits
* Optimised for fast switching, low spiking, high efficiency
* Low QG x RDSon FOM for high.

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