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PSMN018-100PSF Datasheet Preview

PSMN018-100PSF Datasheet

N-channel MOSFET

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PSMN018-100PSF
NextPower 100 V, 18 mΩ N-channel MOSFET in TO220
package
10 April 2017
Product data sheet
1. General description
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for
industrial & consumer applications.
2. Features and benefits
Optimised for fast switching, low spiking, high efficiency
Low QG x RDSon FOM for high efficiency switching applications
Low body diode losses (Qrr) and fast recovery (trr)
Strong avalanche energy rating (EAS)
Avalanche rated & 100% tested
Ha-free & RoHS compliant TO220 package
3. Applications
Synchronous rectification in AC-to-DC and DC-to-DC applications
Brushed & BLDC motor control
UPS & solar inverter
LED lighting
Battery protection
Full-bridge & half-bridge applications
Flyback & resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 11
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
Fig. 12; Fig. 13
Min Typ Max Unit
- - 100 V
[1] - - 53 A
- - 111 W
-55 -
175 °C
-
14.9 18
- 22 28 mΩ
- 4.2 - nC
- 21.4 - nC




nexperia

PSMN018-100PSF Datasheet Preview

PSMN018-100PSF Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN018-100PSF
NextPower 100 V, 18 mΩ N-channel MOSFET in TO220 package
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
[1] Avalanche current is limited by IAS
[2] Protected by 100% test
Conditions
ID = 20.5 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; Fig. 4;
Unclamped
[2]
Min Typ Max Unit
- - 109 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN018-100PSF TO-220AB
Description
Version
plastic, single-ended package (heatsink mounted, 1 mounting SOT78
hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body
7. Marking
Table 4. Marking codes
Type number
PSMN018-100PSF
Marking code
PSMN018-100PSF
PSMN018-100PSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 April 2017
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number PSMN018-100PSF
Description N-channel MOSFET
Maker nexperia
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