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PSMN017-80PS Datasheet Preview

PSMN017-80PS Datasheet

N-channel MOSFET

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PSMN017-80PS
N-channel 80 V 17 mstandard level MOSFET in TO220
Rev. 3 — 27 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 10 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 13
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;
avalanche energy
ID = 50 A; Vsup 80 V;
RGS = 50 ; unclamped
Min Typ Max Unit
- - 80 V
- - 50 A
--
-55 -
103 W
175 °C
- 15.2 29 m
- 13.7 17 m
- 6 - nC
- 26 - nC
- - 55 mJ




nexperia

PSMN017-80PS Datasheet Preview

PSMN017-80PS Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN017-80PS
N-channel 80 V 17 mstandard level MOSFET in TO220
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN017-80PS
TO-220AB
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 50 A;
avalanche energy
Vsup 80 V; RGS = 50 ; unclamped
Min Max Unit
- 80 V
- 80 V
-20 20 V
- 35 A
- 50 A
- 200 A
- 103 W
-55 175 °C
-55 175 °C
- 50 A
- 200 A
- 55 mJ
PSMN017-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 September 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14


Part Number PSMN017-80PS
Description N-channel MOSFET
Maker nexperia
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