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PSMN016-100YS Datasheet Preview

PSMN016-100YS Datasheet

N-channel MOSFET

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PSMN016-100YS
N-channel 100 V 16.3 mstandard level MOSFET in LFPAK
Rev. 4 — 27 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 100 V
- - 51 A
--
-55 -
117 W
175 °C
- - 29.3 m
- 12.7 16.3 m




nexperia

PSMN016-100YS Datasheet Preview

PSMN016-100YS Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN016-100YS
N-channel 100 V 16.3 mstandard level MOSFET in LFPAK
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 50 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;
avalanche energy
ID = 51 A; Vsup 100 V;
unclamped; RGS = 50
Min Typ Max Unit
- 16 - nC
- 54 - nC
- - 87 mJ
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN016-100YS LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
PSMN016-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 September 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15


Part Number PSMN016-100YS
Description N-channel MOSFET
Maker nexperia
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