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nexperia

PSMN015-110P Datasheet Preview

PSMN015-110P Datasheet

N-channel MOSFET

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PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Simple gate drive required due to low
gate charge
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon drain-source on-state
resistance
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 110 V
- - 75 A
- - 300 W
VGS = 10 V; ID = 75 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
- 35 - nC
VGS = 10 V; ID = 25 A;
- 12 15 m
Tj = 25 °C; see Figure 9
and 10




nexperia

PSMN015-110P Datasheet Preview

PSMN015-110P Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN015-110P TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
PSMN015-110P_2
Product data sheet
Rev. 02 — 6 October 2009
© Nexperia B.V. 2017. All rights reserved
2 of 13


Part Number PSMN015-110P
Description N-channel MOSFET
Maker nexperia
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