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PSMN015-100P Datasheet Preview

PSMN015-100P Datasheet

N-channel MOSFET

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PSMN015-100P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 06 — 17 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Rated for avalanche ruggedness
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C;
see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
- - 100 V
- - 75 A
- - 300 W
- 35 - nC
- 12 15 m




nexperia

PSMN015-100P Datasheet Preview

PSMN015-100P Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PSMN015-100P
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN015-100P TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 36 A; Vsup 50 V;
drain-source avalanche unclamped; tp = 0.11 ms; RGS = 50
energy
PSMN015-100P_6
Product data sheet
Rev. 06 — 17 December 2009
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 60.8 A
- 75 A
- 240 A
- 300 W
-55 175 °C
-55 175 °C
- 75 A
- 240 A
- 320 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 12


Part Number PSMN015-100P
Description N-channel MOSFET
Maker nexperia
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PSMN015-100P Datasheet PDF






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