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PSMN013-60HS - N-channel MOSFET

Description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.

2.

Features

  • Dual MOSFET.
  • Repetitive avalanche rated.
  • High reliability LFPAK56D package.
  • Copper-clip, solder die attach.
  • Qualified to 175 °C 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN013-60HS N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. 2. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C 3. Applications • Brushless DC motor control • DC-to-DC converters • High-performance synchronous rectification • High performance and high efficiency server power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - ID drain current VGS = 10 V; Tmb = 25 °C; Fig.
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