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PSMN013-30MLC Datasheet Preview

PSMN013-30MLC Datasheet

N-channel MOSFET

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PSMN013-30MLC
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33
using NextPower Technology
23 February 2018
Product data sheet
1. General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
2. Features and benefits
Low parasitic inductance and resistance
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
3. Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tj = 25 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
RDSon
drain-source on-state VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 10
Dynamic characteristics
QGD
gate-drain charge
ID = 10 A; VDS = 15 V; VGS = 4.5 V;
Fig. 12; Fig. 13
QG(tot)
total gate charge
ID = 10 A; VDS = 15 V; VGS = 10 V;
Fig. 12; Fig. 13
Min Typ Max Unit
- - 30 V
- - 39 A
- - 38 W
-55 -
175 °C
- 14.65 16.9 mΩ
- 11.8 13.6 mΩ
- 1 - nC
- 8 - nC




nexperia

PSMN013-30MLC Datasheet Preview

PSMN013-30MLC Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN013-30MLC
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN013-30MLC
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 8
leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN013-30MLC
Marking code
M13C30
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj = 25 °C
VGS gate-source voltage
Ptot total power dissipation Tmb = 25 °C; Fig. 1
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering
temperature
Min Max Unit
- 30 V
-20 20
V
- 38 W
- 39 A
- 28 A
- 157 A
-55 175 °C
-55 175 °C
- 260 °C
PSMN013-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 February 2018
© Nexperia B.V. 2018. All rights reserved
2 / 14


Part Number PSMN013-30MLC
Description N-channel MOSFET
Maker nexperia
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