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PSMN013-100ES Datasheet Preview

PSMN013-100ES Datasheet

N-channel MOSFET

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PSMN013-100ES
N-channel 100V 13.9mstandard level MOSFET in I2PAK.
Rev. 3 — 29 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj 25 °C; Tj 175 °C
Min Typ Max Unit
- - 100 V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
[1] - - 68 A
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
- - 170 W
Tj junction
temperature
-55 -
175 °C
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 11
[2]
-
-
- 25 m
11 13.9 m
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 14;
see Figure 13
- 17 - nC




nexperia

PSMN013-100ES Datasheet Preview

PSMN013-100ES Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN013-100ES
N-channel 100V 13.9mstandard level MOSFET in I2PAK.
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 13;
see Figure 14
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source
ID = 68 A; Vsup 100 V;
avalanche energy unclamped; RGS = 50
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Min Typ Max Unit
- 59 - nC
- - 127 mJ
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
PSMN013-100ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
PSMN013-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 September 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14


Part Number PSMN013-100ES
Description N-channel MOSFET
Maker nexperia
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