900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






nexperia

PSMN012-60YS Datasheet Preview

PSMN012-60YS Datasheet

N-channel MOSFET

No Preview Available !

PSMN012-60YS
N-channel LFPAK 60 V, 11.1 mstandard level MOSFET
Rev. 01 — 5 January 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 59 A; Vsup 60 V;
RGS = 50
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 30 V; see Figure 14 and 15
Min
-
-
-
-55
-
-
-
Typ Max Unit
- 60 V
- 59 A
- 89 W
- 175 °C
- 71 mJ
6.4 -
28.4 -
nC
nC




nexperia

PSMN012-60YS Datasheet Preview

PSMN012-60YS Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN012-60YS
N-channel LFPAK 60 V, 11.1 mstandard level MOSFET
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
-
-
- 17.8 m
8 11.1 m
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN012-60YS LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
SOT669
PSMN012-60YS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 5 January 2010
2 of 15
© Nexperia B.V. 2017. All rights reserved


Part Number PSMN012-60YS
Description N-channel MOSFET
Maker nexperia
PDF Download

PSMN012-60YS Datasheet PDF






Similar Datasheet

1 PSMN012-60YS N-channel MOSFET
nexperia
2 PSMN012-60YS N-Channel MOSFET
NXP Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy