PSMN012-60HL
PSMN012-60HL is N-channel MOSFET manufactured by Nexperia.
description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package, using application specific (ASFET) repetitive avalanche silicon technology.
2. Features and benefits
- High reliability LFPAK56D package, copper-clip, solder die attach and qualified to 175 °C
- Tested to 1 Bn avalanche events
- LFPAK copper clip package technology
- Copper-clip, solder die attach
- High robustness and reliability
3. Applications
- Brushless DC and Brushed DC motor control
- DC-to-DC converters
- High-performance synchronous rectification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
- ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
- Ptot total power dissipation Tmb = 25 °C; Fig. 1
- Tj junction temperature
-55
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 14
6.1 resistance
VGS = 5 V; ID = 10 A; Tj = 175 °C;
- Fig. 14; Fig. 15
Dynamic characteristics FET1 and FET2
QGD gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 5 V;
- QG(tot) total gate charge
Tj = 25 °C; Fig. 16; Fig. 17
- Avalanche Ruggedness FET1 and FET2
EDS(AL)S non-repetitive drainsource avalanche energy
ID = 40 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 7
[1] [2]
- Typ Max Unit
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