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PSMN011-60ML - N-channel MOSFET

Description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

2.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for standard level gate drive sources.
  • LFPAK33 package is footprint compatible with other 3.3mm types.
  • Qualified to 175 °C 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN011-60ML N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive sources • LFPAK33 package is footprint compatible with other 3.3mm types • Qualified to 175 °C 3. Applications • AC-to-DC converters • Synchronous rectification • DC-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig.
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