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PSMN011-100YSF - N-channel MOSFET

General Description

NextPower 100V standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial & consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • Qualified to 175 °C.
  • Low QG x RDSon FOM for high efficiency switching.

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Full PDF Text Transcription for PSMN011-100YSF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN011-100YSF. For precise diagrams, and layout, please refer to the original PDF.

PSMN011-100YSF NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package 18 March 2019 Product data sheet 1. General description NextPower 100V standard level gate driv...

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a sheet 1. General description NextPower 100V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Qualified to 175 °C • Low QG x RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56 package • Wave-solderable LFPAK56 package • Low-stress LFPAK leadframe for high-reliability applications 3.

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