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PSMN011-100YSF Datasheet Preview

PSMN011-100YSF Datasheet

N-channel MOSFET

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PSMN011-100YSF
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56
package
18 March 2019
Product data sheet
1. General description
NextPower 100V standard level gate drive MOSFET. Qualified to 175 °C and recommended for
industrial & consumer applications.
2. Features and benefits
Low Qrr for higher efficiency and lower spiking
Qualified to 175 °C
Low QG x RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
Low-stress LFPAK leadframe for high-reliability applications
3. Applications
Synchronous rectifier in AC-DC and DC-DC
BLDC motor control
USB-PD and mobile fast-charge adapters
LED lighting
Full-bridge and half-bridge applications
Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 20 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 20 A; Tj = 100 °C;
Fig. 13
ID = 20 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 79.5 A
- - 152 W
-55 -
175 °C
- 8.8 10.9 mΩ
- 13.9 17.7 mΩ
- 8.1 - nC
- 34.3 - nC




nexperia

PSMN011-100YSF Datasheet Preview

PSMN011-100YSF Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
Symbol
Parameter
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Source-drain diode
Qr recovered charge
[1] Protected by 100% test
PSMN011-100YSF
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package
Conditions
ID = 27 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[1]
Min Typ Max Unit
- - 173 mJ
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Fig. 18
- 36.5 - nC
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN011-100YSF
LFPAK56;
Power-SO8
Description
plastic, single-ended surface-mounted package; 4 terminals
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN011-100YSF
Marking code
11FS10Y
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
Ptot
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
peak drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 152 W
- 79.5 A
- 56.2 A
- 318 A
PSMN011-100YSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 March 2019
© Nexperia B.V. 2019. All rights reserved
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Part Number PSMN011-100YSF
Description N-channel MOSFET
Maker nexperia
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