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PSMN008-75B Datasheet Preview

PSMN008-75B Datasheet

N-channel MOSFET

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PSMN008-75B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
„ Rated for avalanche ruggedness
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC convertors
„ Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
- - 75 V
- - 75 A
- - 230 W
- 50 - nC
- 6.5 8.5 m




nexperia

PSMN008-75B Datasheet Preview

PSMN008-75B Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN008-75B
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
[1] It is not possible to make connection to pin 2.
Simplified outline
[1] mb
2
13
SOT404
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN008-75B
4. Limiting values
Version
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 1 and 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 63 A; Vsup 15 V;
drain-source avalanche unclamped; RGS = 50 ; tp = 0.129 ms
energy
Min Max Unit
- 75 V
- 75 V
-20 20
V
- 75 A
- 75 A
- 240 A
- 230 W
-55 175 °C
-55 175 °C
- 75 A
- 240 A
- 395 mJ
PSMN008-75B_4
Product data sheet
Rev. 04 — 11 December 2009
© Nexperia B.V. 2017. All rights reserved
2 of 12


Part Number PSMN008-75B
Description N-channel MOSFET
Maker nexperia
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PSMN008-75B Datasheet PDF






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