PSC2065L Datasheet | Nexperia

description Nexperia introduces leading edge Silicon Carbide (Si C) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The Si C Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior bined with an outstanding figure-of-merit (QC x VF). The Merged Pi N Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2. Features and benefits - Reduced system cost - Temperature independent fast and smooth switching performance - Outstanding figure of merit (Qc x VF) - High IFSM capability - High power density - Reduced system costs - System miniaturization - Reduced EMI 3. Applications - Switch mode power Supply (SMPS) - AC-DC and DC-DC converter - Battery charging infrastructure - Server and tele power supply - Uninterruptible power supply (UPS) - Photovoltaic inverters 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF forward current Static characteristics DC blocking voltage Dynamic characteristics QC total capacitive charge Conditions Tc ≤ 122 °C; δ = 1 VR = 400 V; d IF/dt = 200 A/µs; IF = 20 A; Tj = 25 °C Min Typ Max Unit - - - - - 41 - n C Nexperia 650 V, 20 A Si C Schottky diode in TO247 R2P applications 5. Pinning...