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PSC2065L - 20A SiC Schottky diode

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Features

  • Reduced system cost.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure of merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • Reduced system costs.
  • System miniaturization.
  • Reduced EMI 3.

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Datasheet Details

Part number PSC2065L
Manufacturer Nexperia
File Size 241.96 KB
Description 20A SiC Schottky diode
Datasheet download datasheet PSC2065L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSC2065L 650 V, 20 A SiC Schottky diode in TO247 R2P applications 10 June 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.
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