Datasheet4U Logo Datasheet4U.com

PMZ290UNE2 - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Overview

PMZ290UNE2 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM.
  • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3.