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nexperia

PMZ290UNE2 Datasheet Preview

PMZ290UNE2 Datasheet

N-channel MOSFET

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PMZ290UNE2
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.2 A
- 270 320 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.




nexperia

PMZ290UNE2 Datasheet Preview

PMZ290UNE2 Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PMZ290UNE2
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
D
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ290UNE2
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number
PMZ290UNE2
Marking code
SC
PMZ290UNE2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© Nexperia B.V. 2017. All rights reserved
2 / 16


Part Number PMZ290UNE2
Description N-channel MOSFET
Maker nexperia
Total Page 16 Pages
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