* Low threshold voltage
* Low on-state resistance
* Trench MOSFET technology
* Enhanced power dissipation capability of 1096 mW 3. Applications
* Rel.

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Low on-state resistance
.

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