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PMV50XP Datasheet Preview

PMV50XP Datasheet

P-channel Trench MOSFET

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PMV50XP
20 V, P-channel Trench MOSFET
19 November 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
Enhanced power dissipation capability of 1096 mW
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4.4 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C
resistance
- 48 60 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.




nexperia

PMV50XP Datasheet Preview

PMV50XP Datasheet

P-channel Trench MOSFET

No Preview Available !

Nexperia
PMV50XP
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S
017aaa257
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV50XP
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
PMV50XP
Marking code
[1]
%2M
[1] % = placeholder for manufacturing site code
PMV50XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 November 2014
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PMV50XP
Description P-channel Trench MOSFET
Maker nexperia
Total Page 15 Pages
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