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PMV50XP - P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Low on-state resistance.
  • Trench MOSFET technology.
  • Enhanced power dissipation capability of 1096 mW 3.

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Datasheet Details

Part number PMV50XP
Manufacturer Nexperia
File Size 707.72 KB
Description P-channel Trench MOSFET
Datasheet download datasheet PMV50XP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 1096 mW 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4.
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