* 1.8 V drain-source on-state resistance rated
* Very fast switching
* Trench MOSFET technology 1.3 Applications
* Relay driver
* High-speed line dr.

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick referenc.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* 1.8 V drain-source on-state resistance rated
* Ver.

PMV30ENEA

PMV30UN

PMV30UN2

PMV30XN

PMV30XPEA

PMV31XN

PMV33UPE

PMV35EPE

PMV37EN

PMV37ENEA

PMV100ENEA

PMV100EPA

PMV100XPEA

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