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PMV30UN2 - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • Enhanced power dissipation capability of 1000 mW 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3. Applications • LED driver • Power management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.