PMV20XNE datasheet, mosfet equivalent, nexperia

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Features and benefits

* Trench MOSFET technology
* Low threshold voltage
* Enhanced power dissipation capability of 1200 mW
* ElectroStatic Discharge (ESD) protection: 2 kV HBM.

Application

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference .

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low threshold voltage

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