PMT280ENEA - N-channel MOSFET

Nexperia

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Logic level compatible.
Very fast switching.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM.
AEC-Q101 qualified 3.

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PMT280ENEA n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMT280ENEA
Manufacturer	Nexperia
File Size	727.72 KB
Description	N-channel MOSFET
Datasheet	PMT280ENEA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • LED backlight driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.