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nexperia

PMT200EPE Datasheet Preview

PMT200EPE Datasheet

P-channel MOSFET

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PMT200EPE
70 V, P-channel Trench MOSFET
14 March 2018
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; ID = -2.4 A; Tj = 25 °C
Min Typ Max
- - -70
-20 -
20
[1] - - -2.4
- 130 167
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit
V
V
A




nexperia

PMT200EPE Datasheet Preview

PMT200EPE Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMT200EPE
70 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 D drain
3 S source
4 D drain
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
D
G
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMT200EPE
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PMT200EPE
Marking code
T2EPE
PMT200EPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 March 2018
© Nexperia B.V. 2018. All rights reserved
2 / 15


Part Number PMT200EPE
Description P-channel MOSFET
Maker nexperia
Total Page 15 Pages
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