PMT200EPE
PMT200EPE is P-channel MOSFET manufactured by Nexperia.
70 V, P-channel Trench MOSFET
14 March 2018
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic level patible
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection > 2 k V HBM
3. Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; ID = -2.4 A; Tj = 25 °C
Min Typ Max
- -...
