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nexperia

PMPB95ENEA Datasheet Preview

PMPB95ENEA Datasheet

N-channel MOSFET

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PMPB95ENEA
80 V, single N-channel Trench MOSFET
17 December 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 2.8 A; Tj = 25 °C
Min Typ Max Unit
- - 80 V
-20 -
20 V
[1] - - 4.1 A
- 80 105 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.




nexperia

PMPB95ENEA Datasheet Preview

PMPB95ENEA Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PMPB95ENEA
80 V, single N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
Simplified outline
Graphic symbol
16
7
25
384
Transparent top view
DFN2020MD-6 (SOT1220)
G
D
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB95ENEA
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
PMPB95ENEA
Marking code
2A
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
[1]
[1]
[1]
Min Max Unit
- 80 V
-20 20
V
- 4.1 A
- 2.8 A
- 1.8 A
- 11.2 A
PMPB95ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2013
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PMPB95ENEA
Description N-channel MOSFET
Maker nexperia
Total Page 15 Pages
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