Datasheet4U Logo Datasheet4U.com

PMN55ENE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Logic-level compatible.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMN55LN uTrenchMOS logic level FET NXP
PMN50UPE MOSFET NXP Semiconductors
PMN50XP P-channel TrenchMOS extremely low level FET NXP
PMN50XP P-Channel MOSFET VBsemi
PMN20EN 6.7A N-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMN55ENEA N-channel MOSFET
PMN50EPE P-channel MOSFET
PMN52XP P-channel MOSFET
PMN120ENE N-channel MOSFET
PMN120ENEA N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5s VGS = 10 V; ID = 3.