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PMN52XP Datasheet Preview

PMN52XP Datasheet

P-channel MOSFET

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PMN52XP
20 V, P-channel Trench MOSFET
29 January 2016
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1240 mW
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4.7 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.7 A; Tj = 25 °C
resistance
- 50 62 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.




nexperia

PMN52XP Datasheet Preview

PMN52XP Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMN52XP
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
Simplified outline
654
123
TSOP6 (SOT457)
Graphic symbol
D
G
S
017aaa257
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN52XP
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
7. Marking
Table 4. Marking codes
Type number
PMN52XP
Marking code
H3
PMN52XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 January 2016
© Nexperia B.V. 2017. All rights reserved
2 / 16


Part Number PMN52XP
Description P-channel MOSFET
Maker nexperia
Total Page 16 Pages
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