PMN50EPE Key Features
- Trench MOSFET technology
- Logic-level patible
- Very fast switching
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
| Manufacturer | Part Number | Description |
|---|---|---|
| PMN50UPE | MOSFET | |
NXP Semiconductors |
PMN50XP | P-channel TrenchMOS extremely low level FET |
VBsemi |
PMN50XP | P-Channel MOSFET |