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nexperia

PMN28UNE Datasheet Preview

PMN28UNE Datasheet

N-channel MOSFET

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PMN28UNE
20 V, N-channel Trench MOSFET
16 April 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-
Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 5.5 A; Tj = 25 °C
Min Typ Max
- - 20
-8 -
8
[1] - - 7.1
- 24 32
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit
V
V
A




nexperia

PMN28UNE Datasheet Preview

PMN28UNE Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PMN28UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN28UNE
TSOP6
Description
plastic, surface-mounted package (SC-74)
Version
SOT457
7. Marking
Table 4. Marking codes
Type number
PMN28UNE
Marking code
3G
PMN28UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 April 2018
© Nexperia B.V. 2018. All rights reserved
2 / 15


Part Number PMN28UNE
Description N-channel MOSFET
Maker nexperia
Total Page 15 Pages
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