Datasheet4U Logo Datasheet4U.com

PMN16XNE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • Enhanced power dissipation capability of 1400 mW.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMN20EN 6.7A N-channel Trench MOSFET NXP Semiconductors
PMN22XN single N-channel Trench MOSFET NXP Semiconductors
PMN23UN UTrenchMOS ultra low level FET NXP Semiconductors
PMN25EN 6.2A N-channel Trench MOSFET NXP Semiconductors
PMN25UN 6A N-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMN120ENE N-channel MOSFET
PMN120ENEA N-channel Trench MOSFET
PMN20ENA N-channel MOSFET
PMN230ENE N-channel MOSFET
PMN230ENEA N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMN16XNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1400 mW • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.