PMN16XNE mosfet equivalent, n-channel mosfet.
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* Enhanced power dissipation capability of 1400 mW
* ElectroStatic Discharge .
* LED driver
* Power management
* Low-side loadswitch
* Switching circuits
4. Quick reference data
Tab.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Trench MOSFET technology
* Low threshold voltage
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