Datasheet4U Logo Datasheet4U.com

PMH850UPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM.
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Nexperia

Part Number Description
PMH1200UPE P-channel MOSFET
PMH260UNE N-channel MOSFET
PMH400UNE N-channel MOSFET
PMH550UNE N-channel MOSFET
PMH600UNE N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMH850UPE 30 V, P-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.
Published: |