* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM
* Leadless ultra .

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Very fast .

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