PMH550UNE mosfet equivalent, n-channel mosfet.
* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Leadless ultra small .
* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits
4. Quick reference .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Low threshold voltage
* Very fast .
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