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PMH550UNE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3.

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Full PDF Text Transcription for PMH550UNE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMH550UNE. For precise diagrams, and layout, please refer to the original PDF.

PMH550UNE 30 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless u...

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channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C V

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