PMH1200UPE Datasheet | Nexperia

30 V, P-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits - Low threshold voltage - Very fast switching - Trench MOSFET technology - Electro Static Discharge (ESD) protection > 2 k V HBM - Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications - Relay driver - High-speed line driver - Low-side load switch - Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -410 m A; Tj = 25 °C resistance Min Typ Max -...