Datasheet4U Logo Datasheet4U.com

PMGD290UCEA - N/P-channel MOSFET

Datasheet Summary

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • 2 kV ESD protection.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – PMGD290UCEA

Datasheet Details

Part number PMGD290UCEA
Manufacturer nexperia
File Size 782.58 KB
Description N/P-channel MOSFET
Datasheet download datasheet PMGD290UCEA Datasheet
Additional preview pages of the PMGD290UCEA datasheet.

📁 Similar Datasheet

  • PMGD290UCEA - 725 / 500 mA N/P-channel Trench MOSFET (NXP)
  • PMGD290XN - Dual N-channel mTrenchMOS extremely low level FET (NXP Semiconductors)
  • PMGD280UN - Dual N-channel mTrenchMOS ultra low level FET (NXP Semiconductors)
  • PMGD130UN - dual N-channel Trench MOSFET (NXP)
  • PMGD175XN - MOSFET (NXP)
  • PMGD370XN - Dual N-channel extremely low level FET (Philips)
  • PMGD400UN - Dual N-channel uTrenchMOS ultra low level FET (NXP)
  • PMGD780SN - Dual N-channel mTrenchMOS standard level FET (NXP Semiconductors)
  • PMGD8000LN - Dual UTrenchMOS logic level FET (NXP Semiconductors)
  • PMG370XN - N-channel mTrenchMOS extremely low level FET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • 2 kV ESD protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits • Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.
Published: |