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PMGD175XNE dual N-channel MOSFET

PMGD175XNE Description

PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trenc.

PMGD175XNE Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

PMGD175XNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

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