PMFPB8032XP
PMFPB8032XP is P-channel MOSFET manufactured by Nexperia.
description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode bined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- 1.8 V RDSon rated for low-voltage gate drive
- Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Integrated ultra low VF MEGA Schottky diode
3. Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and puting power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
MOSFET transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12
- 12 V
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1]
- - -3.7 A
Schottky diode
IF forward current
Tsp ≤ 105 °C
- - 2A
VR reverse voltage
Tamb = 25 °C
- - 20 V
MOSFET transistor static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C resistance
- 80 102 mΩ
Nexperia
20 V, 3.7 A / 320 m V VF P-channel MOSFET-Schottky bination
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