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PMF170XP Datasheet Preview

PMF170XP Datasheet

P-channel MOSFET

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PMF170XP
20 V, 1 A P-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low RDSon
Very fast switching
Trench MOSFET technology
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -1 A
- 175 200 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.




nexperia

PMF170XP Datasheet Preview

PMF170XP Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMF170XP
20 V, 1 A P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
12
SC-70 (SOT323)
Graphic symbol
D
G
S
017aaa094
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMF170XP
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
7. Marking
Table 4. Marking codes
Type number
PMF170XP
Marking code
[1]
XD%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
PMF170XP
Product data sheet
Tsp = 25 °C
All information provided in this document is subject to legal disclaimers.
29 October 2013
[1]
[1]
[2]
[1]
Min Max Unit
- -20 V
-12 12
V
- -1 A
- -0.7 A
- -4 A
- 290 mW
- 360 mW
- 1670 mW
-55 150 °C
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PMF170XP
Description P-channel MOSFET
Maker nexperia
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PMF170XP Datasheet PDF






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