PHPT61002NYC datasheet, transistor equivalent, nexperia

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datasheet Download (Size : 705.26KB)

Features and benefits

* High thermal power dissipation capability
* High temperature applications up to 175 °C
* Reduced Printed Circuit Board (PCB) requirements comparing to trans.

Application

up to 175 °C
* Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
* High energy e.

Description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC 2. Features and benefits
* High thermal power dissipation capability
* High temperature applications up .

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